| 24601 | 1N3594 | Silicon Signal Diode | Motorola |
| 24602 | 1N3595 | 125 V, 500 mW silicon switching diode | BKC International Electronics |
| 24603 | 1N3595 | Leaded Silicon Diode General Purpose | Central Semiconductor |
| 24604 | 1N3595 | Small Signal Diode | Fairchild Semiconductor |
| 24605 | 1N3595 | Low Leakage Diode | Microsemi |
| 24606 | 1N3595 | Silicon Signal Diode | Motorola |
| 24607 | 1N3595 | Diode Switching 150V 0.225A 2-Pin DO-35 | New Jersey Semiconductor |
| 24608 | 1N3595 | Low leakage silicon signal diode | SESCOSEM |
| 24609 | 1N3595-1 | 125 V, 500 mW silicon switching diode | BKC International Electronics |
| 24610 | 1N3595-1 | Standard Rectifier (trr more than 500ns) | Microsemi |
| 24611 | 1N3595-1 HARD GLASS | Standard Rectifier (trr more than 500ns) | Microsemi |
| 24612 | 1N3595-1HARDGLASS | Standard Rectifier (trr more than 500ns) | Microsemi |
| 24613 | 1N3595A-1 | Standard Rectifier (trr more than 500ns) | Microsemi |
| 24614 | 1N3595AUR-1 | Standard Rectifier (trr more than 500ns) | Microsemi |
| 24615 | 1N3595E | Low leakage silicon signal diode | SESCOSEM |
| 24616 | 1N3595S | Low leakage silicon signal diode | SESCOSEM |
| 24617 | 1N3595TR | High Conductance Fast Diode | Fairchild Semiconductor |
| 24618 | 1N3595UR-1 | Standard Rectifier (trr more than 500ns) | Microsemi |
| 24619 | 1N3595US HARD GLASS | Standard Rectifier (trr more than 500ns) | Microsemi |
|
| 24620 | 1N3595US-1 HRD GLASS | Standard Rectifier (trr more than 500ns) | Microsemi |
| 24621 | 1N3595US-1HRDGLASS | Standard Rectifier (trr more than 500ns) | Microsemi |
| 24622 | 1N3596 | Silicon Signal Diode | Motorola |
| 24623 | 1N3597 | Silicon Signal Diode | Motorola |
| 24624 | 1N3598 | Silicon Signal Diode | Motorola |
| 24625 | 1N3599 | Silicon Signal Diode | Motorola |
| 24626 | 1N35H | Germanium Point Contact for Small Signal Detector | Hitachi Semiconductor |
| 24627 | 1N360 | Rectifier Diode | Motorola |
| 24628 | 1N360 | Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box | New Jersey Semiconductor |
| 24629 | 1N3600 | Leaded Silicon Diode Switching | Central Semiconductor |
| 24630 | 1N3600 | SWITCHING DIODES | Compensated Devices Incorporated |
| 24631 | 1N3600 | High conductance ultra fast diode. Working inverse voltage 50 V. | Fairchild Semiconductor |
| 24632 | 1N3600 | Silicon Planar Diode | ITT Semiconductors |
| 24633 | 1N3600 | Signal or Computer Diode | Microsemi |
| 24634 | 1N3600 | Signal or Computer Diode | Microsemi |
| 24635 | 1N3600 | Silicon Signal Diode | Motorola |
| 24636 | 1N3600 | Diode Data | National Semiconductor |
| 24637 | 1N3600 | Silicon signal diode - high current switching | SESCOSEM |
| 24638 | 1N3600 | Silicon Diode Case Style DO-7 | Transitron Electronic |
| 24639 | 1N3600DUP | Signal or Computer Diode | Microsemi |
| 24640 | 1N3600UR | SWITCHING DIODE | Compensated Devices Incorporated |
