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Datasheets found :: 1726161
Page: << | 7475 | 7476 | 7477 | 7478 | 7479 | 7480 | 7481 | 7482 | 7483 | 7484 | 7485 | >>
No.Part NameDescriptionManufacturer
299161BC307BTrans GP BJT PNP 45V 0.1A 3-Pin TO-92 BulkNew Jersey Semiconductor
299162BC307BTransistor Silicon PNPON Semiconductor
299163BC307BPNP general purpose transistorsPhilips
299164BC307BPNP Silicon Transistor for AF pre- and driver stages as well as for universal applicationSiemens
299165BC307BBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
299166BC307BPGeneral purpose PNP transistorFERRANTI
299167BC307BRL1Transistor Silicon PNPON Semiconductor
299168BC307BTAPNP Epitaxial Silicon TransistorFairchild Semiconductor
299169BC307BTFPNP Epitaxial Silicon TransistorFairchild Semiconductor
299170BC307BTFRPNP Epitaxial Silicon TransistorFairchild Semiconductor
299171BC307BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
299172BC307BZL1Transistor Silicon PNPON Semiconductor
299173BC307C 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFEContinental Device India Limited
299174BC307CAmplifier Transistors(PNP)Motorola
299175BC307CTrans GP BJT PNP 45V 0.1A 3-Pin TO-92 BulkNew Jersey Semiconductor
299176BC307CTransistor Silicon Plastic PNPON Semiconductor
299177BC307CBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
299178BC307CZL1Amplifier Transistor PNPON Semiconductor
299179BC307PGeneral purpose PNP transistorFERRANTI


299180BC307VISilicon PNP transistor, general purposeSESCOSEM
299181BC307VIPNP silicon transistor, audio amplification and general purposeSESCOSEM
299182BC308 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFEContinental Device India Limited
299183BC308Switching and Amplifier ApplicationsFairchild Semiconductor
299184BC308Si-PLANAR EPITAXIAL-pnp TRANSISTORIPRS Baneasa
299185BC308General Purpose TransistorKorea Electronics (KEC)
299186BC308PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
299187BC308Silicon p-n-p low power transistorMullard
299188BC308Transistor PNPSiemens
299189BC308PNP Silicon Transistor for AF pre- and driver stages as well as for universal applicationSiemens
299190BC308Tranzystor małej częstotliwości małej mocyUltra CEMI
299191BC308Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA.USHA India LTD
299192BC308A 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
299193BC308APNP Epitaxial Silicon TransistorFairchild Semiconductor
299194BC308ASi-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40IPRS Baneasa
299195BC308ASilicon PNP transistor, general purposeSESCOSEM
299196BC308APNP silicon transistor, audio amplification and general purposeSESCOSEM
299197BC308APNP Silicon Transistor for AF pre- and driver stages as well as for universal applicationSiemens
299198BC308ABUPNP Epitaxial Silicon TransistorFairchild Semiconductor
299199BC308APGeneral purpose PNP transistorFERRANTI
299200BC308ATAPNP Epitaxial Silicon TransistorFairchild Semiconductor


Datasheets found :: 1726161
Page: << | 7475 | 7476 | 7477 | 7478 | 7479 | 7480 | 7481 | 7482 | 7483 | 7484 | 7485 | >>


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