| 303681 | BCR10CM | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303682 | BCR10CM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 303683 | BCR10CM-12 | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303684 | BCR10CM-12L | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303685 | BCR10CM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 303686 | BCR10CM-8 | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303687 | BCR10CM-8L | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303688 | BCR10CS | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 303689 | BCR10CS | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 303690 | BCR10CS | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
| 303691 | BCR10PM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 303692 | BCR10PM | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 303693 | BCR10PM | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303694 | BCR10PM-12 | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303695 | BCR10PM-12L | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303696 | BCR10PM-8 | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303697 | BCR10PM-8L | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 303698 | BCR10PN | Digital Transistors - SOT363 package | Infineon |
| 303699 | BCR10PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
|
| 303700 | BCR10UM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 303701 | BCR112 | Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm | Infineon |
| 303702 | BCR112 | NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) | Siemens |
| 303703 | BCR112F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 303704 | BCR112FE6327 | Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhm | Infineon |
| 303705 | BCR112L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 303706 | BCR112L3E6327 | Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhm | Infineon |
| 303707 | BCR112T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 303708 | BCR112TE6327 | Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm | Infineon |
| 303709 | BCR112U | NPN Silicon Digital Transistor | Infineon |
| 303710 | BCR112W | Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm | Infineon |
| 303711 | BCR112W | NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) | Siemens |
| 303712 | BCR114 | NPN Silicon Digital Transistor | Infineon |
| 303713 | BCR114F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 303714 | BCR114FE6327 | Digital Transistors - R1= 4,7 kOhm ; R2= 10 kOhm | Infineon |
| 303715 | BCR114L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 303716 | BCR114L3E6327 | Digital Transistors - R1= 4,7 kOhm ; R2= 10 kOhm | Infineon |
| 303717 | BCR114T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 303718 | BCR114TE6327 | Digital Transistors - R1= 4,7kOhm; R2= 10kOhm | Infineon |
| 303719 | BCR116 | Digital Transistors - R1=4.7kOhm; R2=47kOhm | Infineon |
| 303720 | BCR116 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
