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Datasheets found :: 1726161
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No.Part NameDescriptionManufacturer
832812N3422THYRISTORMotorola
832822N3423Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiersMotorola
832832N3423Silicon NPN TransistorMotorola
832842N3423BIPOLAR DEVICES WITH POLARITY NPNNew Jersey Semiconductor
832852N3423Silicon transistor differential amplifiersSGS-ATES
832862N3424Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiersMotorola
832872N3424Silicon NPN TransistorMotorola
832882N3424Trans GP BJT NPN 60V 3A 3-Pin TO-5New Jersey Semiconductor
832892N3424Silicon transistor differential amplifiersSGS-ATES
832902N3425Dual NPN silicon transistor designed for use as a high-frequency sense amplifierMotorola
832912N3425Silicon NPN TransistorMotorola
832922N3426Switching transistormble
832932N3426Switching transistormble
832942N3426Silicon NPN TransistorMotorola
832952N3426Silicon n-p-n medium power transistorMullard
832962N3426Silicon transistor, high speed saturated switchesSGS-ATES
832972N3427PNP germanium transistorMotorola
832982N3427Germanium PNP TransistorMotorola
832992N3428PNP germanium transistorMotorola


833002N3428Germanium PNP TransistorMotorola
833012N3429Silicon NPN TransistorMotorola
833022N342ASilicon NPN TransistorMotorola
833032N342ATrans GP BJT NPN 60V 3A 3-Pin TO-5New Jersey Semiconductor
833042N342BSilicon NPN TransistorMotorola
833052N343Silicon NPN TransistorMotorola
833062N343Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
833072N3430Silicon NPN TransistorMotorola
833082N3431Silicon NPN TransistorMotorola
833092N3432Silicon NPN TransistorMotorola
833102N3433Silicon NPN TransistorMotorola
833112N3434Silicon NPN TransistorMotorola
833122N3435Silicon NPN TransistorMotorola
833132N3436N-Channel FIELD-EFFECT TRANSISTOR Junction FETMotorola
833142N3437N-Channel FIELD-EFFECT TRANSISTOR Junction FETMotorola
833152N3438N-Channel FIELD-EFFECT TRANSISTOR Junction FETMotorola
833162N3439HIGH VOLTAGE AMPLIFIERSBoca Semiconductor Corporation
833172N3439Leaded Small Signal Transistor General PurposeCentral Semiconductor
833182N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE.Continental Device India Limited
833192N3439High-voltage silicon N-P-N planar transistor.General Electric Solid State
833202N3439Silicon NPN High Voltage TransistorIPRS Baneasa


Datasheets found :: 1726161
Page: << | 2078 | 2079 | 2080 | 2081 | 2082 | 2083 | 2084 | 2085 | 2086 | 2087 | 2088 | >>


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