| 84641 | 2N3791 | Silicon PNP triple diffused power transistor | TOSHIBA |
| 84642 | 2N3792 | SILICON PNP POWER TRANSISTORS | Boca Semiconductor Corporation |
| 84643 | 2N3792 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 84644 | 2N3792 | 100V Epitaxial-base NPN-PNP | Comset Semiconductors |
| 84645 | 2N3792 | Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. | General Electric Solid State |
| 84646 | 2N3792 | PNP Transistor | Microsemi |
| 84647 | 2N3792 | POWER TRANSISTORS(10A,150W) | MOSPEC Semiconductor |
| 84648 | 2N3792 | PNP silicon power transistor | Motorola |
| 84649 | 2N3792 | Silicon PNP Transistor | Motorola |
| 84650 | 2N3792 | Trans GP BJT PNP 80V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 84651 | 2N3792 | Silicon PNP Power Transistors TO-3 package | Savantic |
| 84652 | 2N3792 | PNP SILICON EPITAXIAL BASE POWER TANSISTORS | SemeLAB |
| 84653 | 2N3792 | Epitaxial-base transistor for linear and switching applications | SGS-ATES |
| 84654 | 2N3792 | Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N3716 | Silicon Transistor Corporation |
| 84655 | 2N3792 | Silicon PNP triple diffused power transistor | TOSHIBA |
| 84656 | 2N3792H | Trans GP BJT PNP 80V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 84657 | 2N3792J | Trans GP BJT PNP 80V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 84658 | 2N3792MP | Trans GP BJT PNP 80V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 84659 | 2N3793 | Silicon NPN Transistor | Motorola |
|
| 84660 | 2N3794 | Silicon NPN Transistor | Motorola |
| 84661 | 2N3795 | Silicon PNP Transistor | Motorola |
| 84662 | 2N3796 | Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range | Motorola |
| 84663 | 2N3796 | N-Channel MOS (Field-Effect Transistor) | Motorola |
| 84664 | 2N3796 | MOSFET / Low Power Audio | Motorola |
| 84665 | 2N3796 | Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 84666 | 2N3797 | Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range | Motorola |
| 84667 | 2N3797 | N-Channel MOS (Field-Effect Transistor) | Motorola |
| 84668 | 2N3797 | Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 84669 | 2N3798 | PNP silicon annular transistor, TO-18 case | Motorola |
| 84670 | 2N3798 | Silicon PNP Transistor | Motorola |
| 84671 | 2N3798 | BJT | New Jersey Semiconductor |
| 84672 | 2N3798 | Chip Type 2C2605 Geometry 0220 Polarity NPN | Semicoa Semiconductor |
| 84673 | 2N3798A | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 84674 | 2N3798A | Trans GP BJT NPN 90V 3-Pin TO-18 Box | New Jersey Semiconductor |
| 84675 | 2N3799 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 84676 | 2N3799 | PNP silicon annular transistor, TO-18 case | Motorola |
| 84677 | 2N3799 | Silicon PNP Transistor | Motorola |
| 84678 | 2N3799 | Trans GP BJT PNP 60V 0.05A 3-Pin TO-18 Box | New Jersey Semiconductor |
| 84679 | 2N3799 | PNP, LOW NOISE AMPLIFIER TRANSISTOR | SemeLAB |
| 84680 | 2N3799 | Chip Type 2C2605 Geometry 0220 Polarity NPN | Semicoa Semiconductor |
