| 85161 | 2N3904ZL1 | General Purpose Transistors | ON Semiconductor |
| 85162 | 2N3904ZL1 | General Purpose Transistors | ON Semiconductor |
| 85163 | 2N3904_D10Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 85164 | 2N3904_D28Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 85165 | 2N3904_D81Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 85166 | 2N3904_J05Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 85167 | 2N3904_J18Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 85168 | 2N3904_J25Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 85169 | 2N3904_J61Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 85170 | 2N3905 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 85171 | 2N3905 | 0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE | Continental Device India Limited |
| 85172 | 2N3905 | Si-Epitaxial PlanarTransistors | Diotec Elektronische |
| 85173 | 2N3905 | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 85174 | 2N3905 | Low Noise PNP Transistor | FERRANTI |
| 85175 | 2N3905 | Switching PNP transistor | FERRANTI |
| 85176 | 2N3905 | Planar epitaxial PNP silicon transistor. -40V, 200mA. | General Electric Solid State |
| 85177 | 2N3905 | PNP Silicon Epitaxial Planar Transistor | Honey Technology |
| 85178 | 2N3905 | PNP silicon general purpose switching and amplifier transistor | ITT Semiconductors |
| 85179 | 2N3905 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS | Micro Electronics |
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| 85180 | 2N3905 | PNP silicon annular transistor, TO-92 case | Motorola |
| 85181 | 2N3905 | Silicon PNP Transistor | Motorola |
| 85182 | 2N3905 | PNP Silicon Transistor | NEC |
| 85183 | 2N3905 | General Purpose Transistors(PNP Silicon) | ON Semiconductor |
| 85184 | 2N3905 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 85185 | 2N3905 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 85186 | 2N3905 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. | USHA India LTD |
| 85187 | 2N3905-D | General Purpose Transistors PNP Silicon | ON Semiconductor |
| 85188 | 2N3905BU | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 85189 | 2N3905TA | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 85190 | 2N3905TAR | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 85191 | 2N3905TF | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 85192 | 2N3905TFR | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 85193 | 2N3906 | PNP Silicon Transistor (General small signal application Switching application) | AUK Corp |
| 85194 | 2N3906 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 85195 | 2N3906 | 0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE | Continental Device India Limited |
| 85196 | 2N3906 | Si-Epitaxial PlanarTransistors | Diotec Elektronische |
| 85197 | 2N3906 | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 85198 | 2N3906 | Low Noise PNP Transistor | FERRANTI |
| 85199 | 2N3906 | Switching PNP transistor | FERRANTI |
| 85200 | 2N3906 | Planar epitaxial PNP silicon transistor. -40V, 200mA. | General Electric Solid State |
