IRF610 datasheet
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IRF610 manufactured by:
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3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET | 
Download IRF610 datasheet from Fairchild Semiconductor |
pdf 96 kb |
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. Others with the same file for datasheet: IRF611, IRF612, IRF613 |
Download IRF610 datasheet from General Electric Solid State |
pdf 170 kb |
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200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Others with the same file for datasheet: IRF610PBF |
Download IRF610 datasheet from International Rectifier |
pdf 180 kb |
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3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET | Download IRF610 datasheet from Intersil |
pdf 60 kb |
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Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB Others with the same file for datasheet: IRF610R, IRF610S |
Download IRF610 datasheet from New Jersey Semiconductor |
pdf 112 kb |
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N-Channel Power MOSFET | Download IRF610 datasheet from Samsung Electronic |
pdf 742 kb |
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MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A | Download IRF610 datasheet from Siliconix |
pdf 758 kb |
| IRF5YZ48CM | View IRF610 to our catalog | IRF610-613 |