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Datasheets found :: 1726161
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No.Part NameDescriptionManufacturer
889212N5287Silicon PNP TransistorMotorola
889222N5287Trans GP BJT PNP 100V 5A 3-Pin TO-59New Jersey Semiconductor
889232N5288Silicon NPN TransistorMotorola
889242N5288Trans GP BJT NPN 100V 10A 3-Pin TO-61New Jersey Semiconductor
889252N5288Silicon NPN Power Transistor, TO-61 (isolated collector) packageSilicon Transistor Corporation
889262N5289Silicon NPN TransistorMotorola
889272N5289Trans GP BJT NPN 100V 10A 3-Pin TO-61New Jersey Semiconductor
889282N5289Silicon NPN Power Transistor, TO-61 (isolated collector) packageSilicon Transistor Corporation
889292N529Germanium TransistorMotorola
889302N5290Silicon PNP TransistorMotorola
889312N5290Trans GP BJT PNP 100V 10A 3-Pin TO-61New Jersey Semiconductor
889322N5291Silicon PNP TransistorMotorola
889332N5291Trans GP BJT PNP 100V 10A 3-Pin TO-61New Jersey Semiconductor
889342N5292Silicon PNP TransistorMotorola
889352N5292Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 BoxNew Jersey Semiconductor
889362N5293Silicon NPN TransistorMotorola
889372N5293Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 BoxNew Jersey Semiconductor
889382N5293Silicon NPN Power Transistors TO-220 packageSavantic
889392N5294NPN SILICON TRANSISTORCentral Semiconductor


889402N5294 36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE.Continental Device India Limited
889412N5294Silicon N-P-N transistor. 80V, 36W.General Electric Solid State
889422N5294Silicon NPN Single Diffused Low Frequency Power TransistorIPRS Baneasa
889432N5294Silicon NPN TransistorMotorola
889442N5294Trans GP BJT NPN 70V 4A 3-Pin(3+Tab) TO-220 BoxNew Jersey Semiconductor
889452N5294Silicon NPN Power Transistors TO-220 packageSavantic
889462N5294NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132SESCOSEM
889472N5294Power NPN silicon transistor, AF amplification and general purposeSESCOSEM
889482N5294Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W.USHA India LTD
889492N5295Silicon NPN TransistorMotorola
889502N5295Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 BoxNew Jersey Semiconductor
889512N5295Silicon NPN Power Transistors TO-220 packageSavantic
889522N5296NPN SILICON TRANSISTORCentral Semiconductor
889532N5296 36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE.Continental Device India Limited
889542N5296Silicon N-P-N transistor. 60V, 36W.General Electric Solid State
889552N5296Silicon NPN Single Diffused Low Frequency Power TransistorIPRS Baneasa
889562N5296Silicon NPN TransistorMotorola
889572N5296Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 BoxNew Jersey Semiconductor
889582N5296Silicon NPN Power Transistors TO-220 packageSavantic
889592N5296NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133SESCOSEM
889602N5296Power NPN silicon transistor, AF amplification and general purposeSESCOSEM


Datasheets found :: 1726161
Page: << | 2219 | 2220 | 2221 | 2222 | 2223 | 2224 | 2225 | 2226 | 2227 | 2228 | 2229 | >>


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