| 88961 | 2N5296 | Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. | USHA India LTD |
| 88962 | 2N5297 | Silicon NPN Transistor | Motorola |
| 88963 | 2N5297 | Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box | New Jersey Semiconductor |
| 88964 | 2N5297 | Silicon NPN Power Transistors TO-220 package | Savantic |
| 88965 | 2N5298 | NPN SILICON TRANSISTOR | Central Semiconductor |
| 88966 | 2N5298 | 36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. | Continental Device India Limited |
| 88967 | 2N5298 | Silicon N-P-N transistor. 80V, 36W. | General Electric Solid State |
| 88968 | 2N5298 | Silicon NPN Single Diffused Low Frequency Power Transistor | IPRS Baneasa |
| 88969 | 2N5298 | Silicon NPN Transistor | Motorola |
| 88970 | 2N5298 | Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-220 Box | New Jersey Semiconductor |
| 88971 | 2N5298 | Silicon NPN Power Transistors TO-220 package | Savantic |
| 88972 | 2N5298 | NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 | SESCOSEM |
| 88973 | 2N5298 | Power NPN silicon transistor, AF amplification and general purpose | SESCOSEM |
| 88974 | 2N53 | Germanium Transistor | Motorola |
| 88975 | 2N530 | Germanium Transistor | Motorola |
| 88976 | 2N5301 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 88977 | 2N5301 | High current, high power, high speed N-P-N power transistor. 40V, 200W. | General Electric Solid State |
| 88978 | 2N5301 | POWER TRANSISTORS(200W) | MOSPEC Semiconductor |
| 88979 | 2N5301 | High-power NPN silicon transistor | Motorola |
|
| 88980 | 2N5301 | Silicon NPN Transistor | Motorola |
| 88981 | 2N5301 | Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 88982 | 2N5301 | POWER TRANSISTORS NPN SILICON | ON Semiconductor |
| 88983 | 2N5301 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 88984 | 2N5301 | Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N4398 | Silicon Transistor Corporation |
| 88985 | 2N5301 | 40 V, 30 A, 200 W, NPN silicon power transistor | Texas Instruments |
| 88986 | 2N5301 | Silicon NPN triple diffused power transistor | TOSHIBA |
| 88987 | 2N5302 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 88988 | 2N5302 | High current, high power, high speed N-P-N power transistor. 60V, 200W. | General Electric Solid State |
| 88989 | 2N5302 | NPN Transistor | Microsemi |
| 88990 | 2N5302 | POWER TRANSISTORS(200W) | MOSPEC Semiconductor |
| 88991 | 2N5302 | High-power NPN silicon transistor | Motorola |
| 88992 | 2N5302 | Silicon NPN Transistor | Motorola |
| 88993 | 2N5302 | Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 88994 | 2N5302 | High-Power NPN Silicon Transistor | ON Semiconductor |
| 88995 | 2N5302 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 88996 | 2N5302 | Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N4399 | Silicon Transistor Corporation |
| 88997 | 2N5302 | 60 V, 30 A, 200 W, NPN silicon power transistor | Texas Instruments |
| 88998 | 2N5302 | Silicon NPN triple diffused power transistor | TOSHIBA |
| 88999 | 2N5302 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) | Wing Shing Computer Components |
| 89000 | 2N5302-D | High-Power NPN Silicon Transistor | ON Semiconductor |
